QUANTUM-WELL INGAASP/INP LASERS

被引：0
|
作者：
GOLIKOVA, EG
DURAEV, VP
KOZIKOV, SA
KRIGEL, VG
LABUTIN, OA
SHVEIKIN, VI
机构：
来源：
KVANTOVAYA ELEKTRONIKA | 1995年 / 22卷 / 02期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An investigation is reported of InGaAsP/InP heterojunction lasers (emitting at 1.55 mu m) with quantum-well layers formed by MOCVD epitaxy. A description is given of the geometry of the quantum-well layers. The Auger electron profile and the watt-ampere characteristics are reported. The main parameters of these quantum-well lasers are analysed and it is shown that they have low threshold currents, a narrow luminescence spectrum, and low optical losses (less than 13 cm(-1)). Moreover, their characteristic temperature is higher than that of lasers made from bulk crystals.
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页码：105 / 107
页数：3
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