ROOM-TEMPERATURE CVD PROCESS FOR PREPARING BORON-DIFFUSION SOURCES

被引:0
|
作者
DOBOS, K
机构
关键词
D O I
10.1149/1.2129509
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:2523 / 2526
页数:4
相关论文
共 50 条
  • [1] CVD-BN FOR BORON-DIFFUSION IN SILICON
    SHOHNO, K
    HIRAYAMA, M
    OZAKI, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (03) : C91 - C91
  • [2] VERSATILE BORON-DIFFUSION PROCESS
    STACH, J
    KRUEST, J
    SOLID STATE TECHNOLOGY, 1976, 19 (10) : 60 - &
  • [3] BORON-DIFFUSION INTO SI FROM CVD-BN
    KIM, C
    SHONO, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : C104 - C104
  • [4] BORON-DIFFUSION IN SILICON FROM METAL BORIDE SOURCES
    RYAN, JG
    VARAHRAMYAN, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (11) : C537 - C537
  • [5] ANOMALOUS BORON-DIFFUSION IN SILICON FROM PLANAR BORON-NITRIDE SOURCES
    STACH, J
    TURLEY, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (05) : 722 - 724
  • [6] ANOMALOUS BORON-DIFFUSION IN SILICON FROM PLANAR BORON-NITRIDE SOURCES
    BROWN, DM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) : 1677 - 1677
  • [7] CVD-BN FOR BORON-DIFFUSION IN SI AND ITS APPLICATION TO SI DEVICES
    HIRAYAMA, M
    SHOHNO, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1671 - 1676
  • [8] DIFFUSION IN METALS AT ROOM-TEMPERATURE
    HEUSLER, O
    ZEITSCHRIFT FUR METALLKUNDE, 1994, 85 (01): : 47 - 49
  • [9] BORON-DIFFUSION PROCESS DURING BORITING OF 45 CONSTRUCTION STEEL
    BERZINA, IG
    GUSEV, EB
    FEDINA, GN
    FEDIN, VM
    FIZIKA METALLOV I METALLOVEDENIE, 1984, 57 (05): : 926 - 929
  • [10] INFLUENCE OF FLUORINE IMPLANT ON BORON-DIFFUSION - DETERMINATION OF PROCESS MODELING PARAMETERS
    VUONG, HH
    GOSSMANN, HJ
    RAFFERTY, CS
    LUFTMAN, HS
    UNTERWALD, FC
    JACOBSON, DC
    AHRENS, RE
    BOONE, T
    ZEITZOFF, PM
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (07) : 3056 - 3060