BORON-DIFFUSION INTO SI FROM CVD-BN

被引：0

作者：

KIM, C ^{[1
]}

SHONO, K ^{[1
]}

机构：

[1] SOPHIA UNIV,FAC SCI & TECHNOL,DEPT ELECT & ELECTR ENGN,TOKYO 102,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C104 / C104

页数：1

共 50 条

[1] CVD-BN FOR BORON-DIFFUSION IN SILICON
SHOHNO, K
HIRAYAMA, M
OZAKI, M
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (03) : C91 - C91
[2] CVD-BN FOR BORON-DIFFUSION IN SI AND ITS APPLICATION TO SI DEVICES
HIRAYAMA, M
SHOHNO, K
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1671 - 1676
[3] BORON-DIFFUSION INTO SI FROM CVD-BN COVERED WITH SI3N4 AND APPLICATION TO MASTER SLICE P-MOS IC
SHOHNO, K
KIM, T
KIM, C
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) : 1546 - 1550
[4] MODEL FOR BORON-DIFFUSION IN SI AT HIGH-CONCENTRATIONS
HOLLAND, OW
NARAYAN, J
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 40-1 : 537 - 542
[5] ROOM-TEMPERATURE CVD PROCESS FOR PREPARING BORON-DIFFUSION SOURCES
DOBOS, K
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (11) : 2523 - 2526
[6] EFFECTS OF STRAIN ON BORON-DIFFUSION IN SI AND SI1-XGEX
KUO, P
HOYT, JL
GIBBONS, JF
TURNER, JE
LEFFORGE, D
APPLIED PHYSICS LETTERS, 1995, 66 (05) : 580 - 582
[7] BORON-DIFFUSION IN SILICON
MARCHIANDO, JF
ROITMAN, P
ALBERS, J
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2322 - 2330
[8] REDUCTION OF TRANSIENT BORON-DIFFUSION IN PREAMORPHIZED SI BY CARBON IMPLANTATION
NISHIKAWA, S
TANAKA, A
YAMAJI, T
APPLIED PHYSICS LETTERS, 1992, 60 (18) : 2270 - 2272
[9] INVESTIGATION OF BORON-DIFFUSION FROM POLYCRYSTALLINE SILICON
GARBEN, B
ORRARIENZO, WA
LEVER, RF
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (10) : 2152 - 2156
[10] BORON-DIFFUSION IN SILICON FROM A POLYMER SOURCE
TONEVA, AT
DIMOVA, DI
IVANOVA, PG
KUNEV, SK
DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1985, 38 (11): : 1477 - 1479

← 1 2 3 4 5 →