CRITERION FOR DETERMINING THE SWITCHING VOLTAGE OF A METAL-THIN INSULATOR-SI(N)-SI(P+) DEVICE

被引：6
|
作者：
MILLAN, J [1 ]
SERRAMESTRES, F [1 ]
BUXO, J [1 ]
机构：
[1] CNRS,AUTOMAT & ANAL SYST LAB,F-31400 TOULOUSE,FRANCE
来源：
REVUE DE PHYSIQUE APPLIQUEE | 1979年 / 14卷 / 11期
关键词：
D O I：
10.1051/rphysap:019790014011092100
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：921 / 925
页数：5
相关论文
共 50 条
  • [41] Temperature-dependent current-voltage measurements of Au/C9H7N/p-Si: Characterization of a metal-organic-semiconductor device
    Caldiran, Z.
    Aydogan, S.
    Yesildag, A.
    Ekinci, D.
    Kurudirek, S. V.
    Turut, A.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 34 : 58 - 64
  • [42] High-performance infrared light trapping in nano-needle structured p+ SnOx ( x ≤ 1)/thin film n-Ge photodiodes on Si
    Wang, Xiaoxin
    Wong, Andrew
    Malek, Stephanie
    Cai, Yan
    Liu, Jifeng
    OPTICS LETTERS, 2015, 40 (11) : 2603 - 2606
  • [43] SIO2/TIO2 DOUBLE-LAYER ANTIREFLECTIVE COATING DEPOSITED AT ROOM-TEMPERATURE FOR METAL/INSULATOR/N-SI/P-SI SOLAR-CELLS
    JIAO, KL
    ANDERSON, WA
    SOLAR CELLS, 1987, 22 (03): : 229 - 236
  • [44] Frequency and gate voltage effects on the dielectric properties and electrical conductivity of Al/SiO2/p-Si metal-insulator-semiconductor Schottky diodes
    Yildiz, D. E.
    Dokme, I.
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (01)
  • [45] Temperature dependent junction capacitance-voltage characteristics of Ni embedded TiN/SiO2/p-Si metal-insulator-semiconductor structure
    Panda, J.
    Chattopadhyay, S.
    Nath, T. K.
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (22)
  • [46] Processing of n+/p-/p+ strip detectors with atomic layer deposition (ALD) grown Al2O3 field insulator on magnetic Czochralski silicon (MCz-si) substrates
    Harkonen, J.
    Tuovinen, E.
    Luukka, P.
    Gadda, A.
    Maenpaa, T.
    Tuominen, E.
    Arsenovich, T.
    Junkes, A.
    Wu, X.
    Li, Z.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2016, 828 : 46 - 51
  • [47] Visible to near-infrared broadband photodetector employing thin film topological insulator heterojunction (p-TlBiSe2/n-Si) diode
    Maurya, Gyanendra Kumar
    Gautam, Vidushi
    Ahmad, Faizan
    Singh, Roshani
    Kandpal, Kavindra
    Kumar, Rachana
    Kumar, Mahesh
    Kumar, Pramod
    Tiwari, Akhilesh
    APPLIED SURFACE SCIENCE, 2023, 612
  • [48] Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications
    Chen, Pin-Guang
    Chen, Kuan-Ting
    Tang, Ming
    Wang, Zheng-Ying
    Chou, Yu-Chen
    Lee, Min-Hung
    SENSORS, 2018, 18 (09)
  • [49] p/i/n-Type poly-Si thin-film transistor for quasi-static capacitance-voltage measurement
    Kimura, Mutsumi
    Hiroshima, Yasushi
    SOLID-STATE ELECTRONICS, 2013, 87 : 1 - 3
  • [50] Investigation of annealed, thin(∼2.6 nm)-Al2O3/AlGaN/GaN metal-insulator-semiconductor heterostructures on Si(111) via capacitance-voltage and current-voltage studies
    Lee, H-P
    Bayram, C.
    MATERIALS RESEARCH EXPRESS, 2019, 6 (10)
12345