CRITERION FOR DETERMINING THE SWITCHING VOLTAGE OF A METAL-THIN INSULATOR-SI(N)-SI(P+) DEVICE

被引:6
|
作者
MILLAN, J [1 ]
SERRAMESTRES, F [1 ]
BUXO, J [1 ]
机构
[1] CNRS,AUTOMAT & ANAL SYST LAB,F-31400 TOULOUSE,FRANCE
来源
REVUE DE PHYSIQUE APPLIQUEE | 1979年 / 14卷 / 11期
关键词
D O I
10.1051/rphysap:019790014011092100
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:921 / 925
页数:5
相关论文
共 50 条
  • [31] Dopant penetration behavior of B-doped P+ polycrystalline-Si0.73Ge0.27/Al2O3 or AIN-Al2O3/n-Si metal insulator semiconductor capacitors
    Lee, C
    Park, J
    Cho, MJ
    Hong, SH
    Hwang, CS
    Kim, HJ
    Jeong, J
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2006, 9 (03) : G84 - G86
  • [32] A switching device based on a-Si:H n-i-delta p-i-n stacked structure: Modeling and characterization
    Caputo, D
    deCesare, G
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (12) : 2109 - 2112
  • [33] Criteria for improved open-circuit voltage in a-Si:H(N)/c-Si(P) front heterojunction with intrinsic thin layer solar cells
    Nath, Madhumita
    Chatterjee, P.
    Damon-Lacoste, J.
    Roca i Cabarrocas, P.
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (03)
  • [34] Effect of Different Metallic Contacts on the Device Performance of a p-n Heterostructure of a Topological Insulator and Silicon (p-Bi2Te3/n-Si)
    Ahmad, Faizan
    Kandpal, Kavindra
    Kumar, Naresh
    Kumar, Rachana
    Kumar, Pramod
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (12) : 5388 - 5395
  • [35] Low-voltage-driven Pt/BiFeO3/DyScO3/p-Si-based metal–ferroelectric–insulator–semiconductor device for non-volatile memory
    Rohit Medwal
    Surbhi Gupta
    Shojan P. Pavunny
    Rajesh K. Katiyar
    Reji Thomas
    Ram S. Katiyar
    Journal of Materials Science, 2018, 53 : 4274 - 4282
  • [36] Characterization of CuInGeSe4 thin films and Al/n–Si/p–CuInGeSe4/Au heterojunction device
    Talaat A. Hameed
    I. M. El Radaf
    Hani E. Elsayed-Ali
    Journal of Materials Science: Materials in Electronics, 2018, 29 : 12584 - 12594
  • [37] Deposition of CZTSe thin films and illumination effects on the device properties of Ag/n-Si/p-CZTSe/In heterostructure
    Bayrakli, O.
    Terlemezoglu, M.
    Gullu, H. H.
    Parlak, M.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 709 : 337 - 343
  • [38] NOVEL ANNEALING SCHEME FOR FABRICATING HIGH-QUALITY TI-SILICIDED SHALLOW N+P JUNCTION BY P+ IMPLANTATION INTO THIN TI FILMS ON SI SUBSTRATE
    JUANG, MH
    CHENG, HC
    APPLIED PHYSICS LETTERS, 1992, 60 (13) : 1579 - 1581
  • [39] Low-voltage-driven Pt/BiFeO3/DyScO3/p-Si-based metal-ferroelectric-insulator-semiconductor device for non-volatile memory
    Medwal, Rohit
    Gupta, Surbhi
    Pavunny, Shojan P.
    Katiyar, Rajesh K.
    Thomas, Reji
    Katiyar, Ram S.
    JOURNAL OF MATERIALS SCIENCE, 2018, 53 (06) : 4274 - 4282
  • [40] Characterization of CuInGeSe4 thin films and Al/n-Si/p-CuInGeSe4/Au heterojunction device
    Hameed, Talaat A.
    El Radaf, I. M.
    Elsayed-Ali, Hani E.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 29 (15) : 12584 - 12594