ELECTRON-TRANSPORT IN THIN-BASE INP/INGAAS HBTS

被引：1
|
作者：
LUNDSTROM, MS
DODD, PE
LOVEJOY, ML
HARMON, ES
MELLOCH, MR
KEYES, BM
HAMM, RA
RITTER, D
机构：
[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907
[2] NATL RENEWABLE ENERGY LAB,GOLDEN,CO
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 11期
关键词：
D O I：
10.1109/16.163521
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[No abstract available]
引用
收藏
页码：2658 / 2659
页数：2
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