共 50 条
- [31] PROPERTIES OF A THIN-BASE HETEROSTRUCTURE PHOTOTRANSISTOR SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (10): : 1126 - 1128
- [34] PHOTOCURRENT KINETICS IN THIN-BASE SILICON PHOTODIODES RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1971, 16 (04): : 644 - +
- [36] FIELD-ASSISTED MINORITY-CARRIER ELECTRON-TRANSPORT ACROSS A P-INGAAS-P-INP HETEROJUNCTION JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1483 - 1487
- [38] Continuity-equation analysis of hot electron base transport in InP/InGaAs heterojunction bipolar transistors JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (02): : 485 - 490
- [39] ALE/MOCVD GROWN INP/INGAAS HBTS WITH A HIGHLY-BE-DOPED BASE LAYER AND SUPPRESSED DIFFUSION GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 153 - 158
- [40] MONTE-CARLO INVESTIGATION OF MINORITY ELECTRON-TRANSPORT IN INP FIRST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS FOR ADVANCED ELECTRONIC AND OPTICAL DEVICES, 1989, 1144 : 626 - 630