SELF-LIMITING GROWTH IN ATOMIC LAYER EPITAXY OF ZNTE

被引：12
|
作者：
TAKEMURA, Y
NAKANISHI, H
KONAGAI, M
TAKAHASHI, K
机构：
[1] Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 2B期
关键词：
ZNTE; ALE; MBE; SELF-LIMITING;
D O I：
10.1143/JJAP.30.L246
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
ZnTe films were grown on GaAs substrates by atomic layer epitaxy using the molecular beam epitaxy technique. We investigated the growth rate per cycle as a function of beam intensities of Zn and Te at the substrate temperature of 250-degrees-C and obtained the self-limiting growth of 0.5 monolayer per cycle, independent of Zn or Te beam intensity in the selected ranges.
引用
收藏
页码：L246 / L248
页数：3
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