SELF-LIMITING GROWTH IN ATOMIC LAYER EPITAXY OF ZNTE

被引：12
|
作者：
TAKEMURA, Y
NAKANISHI, H
KONAGAI, M
TAKAHASHI, K
机构：
[1] Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 2B期
关键词：
ZNTE; ALE; MBE; SELF-LIMITING;
D O I：
10.1143/JJAP.30.L246
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
ZnTe films were grown on GaAs substrates by atomic layer epitaxy using the molecular beam epitaxy technique. We investigated the growth rate per cycle as a function of beam intensities of Zn and Te at the substrate temperature of 250-degrees-C and obtained the self-limiting growth of 0.5 monolayer per cycle, independent of Zn or Te beam intensity in the selected ranges.
引用
收藏
页码：L246 / L248
页数：3
相关论文
共 50 条
  • [21] Growth of self-organized dots of Cd1-xMnxTe on ZnTe by atomic layer epitaxy
    Terai, Y
    Kuroda, S
    Takita, K
    JOURNAL OF CRYSTAL GROWTH, 2000, 214 : 178 - 182
  • [22] GROWTH OF ZNSE EPILAYERS ON FE(001) FILMS BY MIGRATION-ENHANCED EPITAXY AND SELF-LIMITING EPITAXY
    ABAD, H
    JONKER, BT
    COTELL, CM
    KREBS, JJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02): : 716 - 719
  • [23] Self-limiting growth of GaAs with doping by molecular layer epitaxy using triethyl-gallium and AsH3
    Nishizawa, J
    Kurabayashi, T
    Plotka, P
    Kikuchi, H
    Hamano, T
    JOURNAL OF CRYSTAL GROWTH, 2002, 244 (3-4) : 236 - 242
  • [24] Self-limiting growth of GaAs molecular layer epitaxy using triethyl-gallium (TEG) and AsH3
    Kurabayashi, T
    Kono, K
    Kikuchi, H
    Nishizawa, J
    Esashi, M
    JOURNAL OF CRYSTAL GROWTH, 2001, 229 (01) : 152 - 157
  • [25] Atomic layer controlled growth of SiO2 films using self-limiting surface chemistry.
    Klaus, JW
    Ott, AW
    Johnson, JM
    George, SM
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1997, 213 : 181 - PHYS
  • [26] Self-limiting growth on dolomite: Experimental observations with in situ atomic force microscopy
    Higgins, SR
    He, XM
    GEOCHIMICA ET COSMOCHIMICA ACTA, 2005, 69 (08) : 2085 - 2094
  • [27] SELF-LIMITING ADSORPTION OF SIH2X2 MOLECULES AND ITS APPLICATION TO SI ATOMIC LAYER EPITAXY BY PHOTOCHEMICAL PROCESSES
    TAKAHASHI, Y
    URISU, T
    DENKI KAGAKU, 1991, 59 (12): : 1064 - 1068
  • [28] Nucleation and surface roughness in self-limiting monolayer epitaxy of GaAs
    Kono, Kazushi
    Kurabayashi, Toru
    Nishizawa, Jun-Ichi
    Esashi, Masayoshi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (10): : 5737 - 5739
  • [29] Nucleation and surface roughness in self-limiting monolayer epitaxy of GaAs
    Kono, K
    Kurabayashi, T
    Nishizawa, J
    Esashi, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (10): : 5737 - 5739
  • [30] ATOMIC LAYER EPITAXY OF ZNSE-ZNTE STRAINED LAYER SUPERLATTICES
    DOSHO, S
    TAKEMURA, Y
    KONAGAI, M
    TAKAHASHI, K
    JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 580 - 583
12345