HOT-CARRIER EFFECTS IN 1.3-MU IN1-XGAXASYP1-Y LIGHT-EMITTING-DIODES

被引:38
|
作者
SHAH, J [1 ]
LEHENY, RF [1 ]
NAHORY, RE [1 ]
TEMKIN, H [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
关键词
D O I
10.1063/1.92823
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:618 / 620
页数:3
相关论文
共 50 条
  • [41] ELECTRICAL AND OPTICAL-PROPERTIES OF HIGH-PERFORMANCE MOCVD GROWN (ALXGA1-X)YIN1-YP VISIBLE LIGHT-EMITTING-DIODES
    MORGAN, DV
    ALIYU, YH
    BUNCE, RW
    BARNES, S
    BOS, T
    ELECTRONICS LETTERS, 1993, 29 (22) : 1991 - 1992
  • [42] 4-11 MU-M INFRARED-EMISSION AND 300 K LIGHT-EMITTING-DIODES FROM ARSENIC-RICH INAS1-XSBX STRAINED-LAYER SUPERLATTICES
    TANG, PJP
    PULLIN, MJ
    CHUNG, SJ
    PHILLIPS, CC
    STRADLING, RA
    NORMAN, AG
    LI, YB
    HART, L
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (08) : 1177 - 1180
  • [43] EFFECT OF CRYSTAL COMPOSITION ON OPTIMIZATION OF RADIATIVE RECOMBINATION IN N-FREE AND N-DOPED IN-1-XGA-XP LIGHT-EMITTING-DIODES
    NELSON, RJ
    HOLONYAK, N
    JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1704 - 1707
  • [44] LIQUID-PHASE EPITAXY OF 1.55 MU-M EMITTING IN1-XGAXASYP1-Y-INP (X-APPROXIMATELY-0.5Y, Y-APPROXIMATELY-0.9) DOUBLE HETEROSTRUCTURE LASERS CHARACTERIZED BY A WEAK DENSITY THRESHOLD CURRENT
    JICQUEL, JP
    PERRONNET, A
    LEBLED, H
    MATABON, M
    BENOIT, J
    JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 453 - 453
  • [45] GREEN AND YELLOW LIGHT-EMITTING-DIODES PRODUCED FROM VAPOR-PHASE EPITAXIAL GAP-N .1. DEEP LEVELS IN DIODES PRODUCED BY EITHER DIFFUSION OR IMPLANTATION OF ZINC
    PICKENHAIN, R
    JACOBS, K
    SEIFERT, W
    CHERNYI, V
    BREHME, S
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 85 (02): : 627 - 639
  • [46] Light-emitting diodes based on Ga1-xInxAsySb1-y solid solutions grown from lead-containing melts
    Parkhomenko, YA
    Astakhova, AP
    Grebenshchikova, EA
    Ivanov, ÉV
    Kunitsyna, EV
    Yakovlev, YP
    TECHNICAL PHYSICS LETTERS, 2004, 30 (07) : 529 - 531
  • [47] Room temperature InAs/InAs1-xSbx single quantum well light emitting diodes with barriers for improved carrier confinement
    Heber, JD
    Gevaux, D
    Li, X
    Phillips, CC
    IEE PROCEEDINGS-OPTOELECTRONICS, 2000, 147 (06): : 407 - 411
  • [48] Marked enhancement in the efficiency of deep ultraviolet light-emitting diodes by using a AlxGa1-xN carrier reservoir layer
    He, Longfei
    Zhao, Wei
    Zhang, Kang
    He, Chenguang
    Wu, Hualong
    Liu, Xiaoyan
    Luo, Xingjun
    Li, Shuti
    Chen, Zhitao
    APPLIED PHYSICS EXPRESS, 2019, 12 (06)
  • [49] Light-emitting diodes based on poly-p-phenylene-vinylene .1. Charge-carrier injection and transport
    Karg, S
    Meier, M
    Riess, W
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (04) : 1951 - 1960
  • [50] INFLUENCE OF TEMPERATURE ON THE 1. 45 mu ELECTROLUMINESCENCE BAND IN THE SPECTRA OF GaP:N AND GaAsP:N LIGHT-EMITTING DIODES.
    Chernyi, V.D.
    Pickenhain, R.
    Henzel, T.
    Kreher, K.
    Soviet physics. Semiconductors, 1984, 18 (07): : 795 - 797