共 50 条
- [44] LIQUID-PHASE EPITAXY OF 1.55 MU-M EMITTING IN1-XGAXASYP1-Y-INP (X-APPROXIMATELY-0.5Y, Y-APPROXIMATELY-0.9) DOUBLE HETEROSTRUCTURE LASERS CHARACTERIZED BY A WEAK DENSITY THRESHOLD CURRENT JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 453 - 453
- [45] GREEN AND YELLOW LIGHT-EMITTING-DIODES PRODUCED FROM VAPOR-PHASE EPITAXIAL GAP-N .1. DEEP LEVELS IN DIODES PRODUCED BY EITHER DIFFUSION OR IMPLANTATION OF ZINC PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 85 (02): : 627 - 639
- [47] Room temperature InAs/InAs1-xSbx single quantum well light emitting diodes with barriers for improved carrier confinement IEE PROCEEDINGS-OPTOELECTRONICS, 2000, 147 (06): : 407 - 411
- [50] INFLUENCE OF TEMPERATURE ON THE 1. 45 mu ELECTROLUMINESCENCE BAND IN THE SPECTRA OF GaP:N AND GaAsP:N LIGHT-EMITTING DIODES. Soviet physics. Semiconductors, 1984, 18 (07): : 795 - 797