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- [21] DETERMINATION OF PROPERTIES OF DEEP LEVELS IN GAAS1-XPX LIGHT-EMITTING-DIODES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (11): : 1448 - 1450
- [24] Visible a-SiC:H P-I-N light emitting diodes with hot-carrier tunneling injection layers Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an, 1992, 15 (06):
- [25] NEGATIVE-RESISTANCE IN ALXGA1-XAS-SI RED LIGHT-EMITTING-DIODES JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (06): : 1107 - 1108
- [26] EXCESS CURRENTS AND STRUCTURE DEFECTS IN INXGA1-XAS-SI LIGHT-EMITTING-DIODES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (08): : 875 - 878
- [30] ORIGIN OF THE LONG-WAVELENGTH-SIDE PEAK IN ALXGA1-XASSI LIGHT-EMITTING-DIODES JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (07): : 3197 - 3198