OBSERVATIONS OF STRAIN EFFECTS ON THE SI(001) SURFACE USING SCANNING TUNNELING MICROSCOPY

被引：58

作者：

SWARTZENTRUBER, BS

MO, YW

WEBB, MB

LAGALLY, MG

机构：

[1] University of Wisconsin, Madison, Wisconsin

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 01期

关键词：

D O I：

10.1116/1.577068

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Scanning tunneling microscopy measurements of the influence of externally applied stress in Si(001) show that strain modifies the relative areas of the p(2x1) and p (1x2) domains, in agreement with low-energy electron diffraction (LEED) results. Strain produces a striped phase of majority and minority domains. The total repeat length between domains of the same type, given by the vicinal miscut of the surface, is conserved. © 1990, American Vacuum Society. All rights reserved.

引用

页码：210 / 213

页数：4

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