OBSERVATIONS OF STRAIN EFFECTS ON THE SI(001) SURFACE USING SCANNING TUNNELING MICROSCOPY

被引:58
|
作者
SWARTZENTRUBER, BS
MO, YW
WEBB, MB
LAGALLY, MG
机构
[1] University of Wisconsin, Madison, Wisconsin
关键词
D O I
10.1116/1.577068
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Scanning tunneling microscopy measurements of the influence of externally applied stress in Si(001) show that strain modifies the relative areas of the p(2x1) and p (1x2) domains, in agreement with low-energy electron diffraction (LEED) results. Strain produces a striped phase of majority and minority domains. The total repeat length between domains of the same type, given by the vicinal miscut of the surface, is conserved. © 1990, American Vacuum Society. All rights reserved.
引用
收藏
页码:210 / 213
页数:4
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