OBSERVATIONS OF STRAIN EFFECTS ON THE SI(001) SURFACE USING SCANNING TUNNELING MICROSCOPY

被引：58
|
作者：
SWARTZENTRUBER, BS
MO, YW
WEBB, MB
LAGALLY, MG
机构：
[1] University of Wisconsin, Madison, Wisconsin
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 01期
关键词：
D O I：
10.1116/1.577068
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Scanning tunneling microscopy measurements of the influence of externally applied stress in Si(001) show that strain modifies the relative areas of the p(2x1) and p (1x2) domains, in agreement with low-energy electron diffraction (LEED) results. Strain produces a striped phase of majority and minority domains. The total repeat length between domains of the same type, given by the vicinal miscut of the surface, is conserved. © 1990, American Vacuum Society. All rights reserved.
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页码：210 / 213
页数：4
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