SELF ANNEALING OF ION-IMPLANTED SILICON - SUGGESTION FOR AN EXPERIMENT

被引：8
|
作者：
MERLI, PG [1 ]
ZIGNANI, F [1 ]
机构：
[1] UNIV BOLOGNA,FAC INGN,IST CHIM,I-40126 BOLOGNA,ITALY
来源：
RADIATION EFFECTS LETTERS | 1980年 / 50卷 / 3-6期
关键词：
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I：
10.1080/01422448008218665
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
Semiconductor materials
引用
收藏
页码：115 / 118
页数：4
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