SELF ANNEALING OF ION-IMPLANTED SILICON - SUGGESTION FOR AN EXPERIMENT

被引：8
|
作者：
MERLI, PG [1 ]
ZIGNANI, F [1 ]
机构：
[1] UNIV BOLOGNA,FAC INGN,IST CHIM,I-40126 BOLOGNA,ITALY
来源：
RADIATION EFFECTS LETTERS | 1980年 / 50卷 / 3-6期
关键词：
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I：
10.1080/01422448008218665
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
Semiconductor materials
引用
收藏
页码：115 / 118
页数：4
相关论文
共 50 条
  • [21] FLASH LAMP ANNEALING OF ION-IMPLANTED POLYCRYSTALLINE SILICON
    KADYRAKUNOV, KB
    NIDAEV, EV
    PLOTNIKOV, AE
    SMIRNOV, LS
    MELNIK, IG
    MAKEEV, MV
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 75 (02): : 483 - 488
  • [22] CHARACTERISTICS OF RAPID THERMAL ANNEALING IN ION-IMPLANTED SILICON
    HOLLAND, OW
    NARAYAN, J
    FATHY, D
    WILSON, SR
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (03) : 905 - 909
  • [23] SELF-ANNEALING OF ION-IMPLANTED SILICON - 1ST EXPERIMENTAL RESULTS
    CEMBALI, GF
    MERLI, PG
    ZIGNANI, F
    APPLIED PHYSICS LETTERS, 1981, 38 (10) : 808 - 810
  • [24] SELF-ANNEALING IN ION-IMPLANTED SI AND GAAS
    KOMAROV, FF
    VACUUM, 1991, 42 (1-2) : 101 - 106
  • [25] DEFECT PRODUCTION AND ANNEALING IN ION-IMPLANTED SILICON-CARBIDE
    HEFT, A
    WENDLER, E
    BACHMAN, T
    GLASER, E
    WESCH, W
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 29 (1-3): : 142 - 146
  • [26] CONTINUOUS ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON
    BUDISHEVSKY, VS
    GROTZSCHEL, R
    KAGADEI, VA
    LEBEDEVA, NI
    PROSKUROVSKY, DI
    YANKELEVICH, EB
    EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 : 262 - 264
  • [27] PULSED ELECTRON-BEAMS FOR ANNEALING OF ION-IMPLANTED SILICON
    LITTLE, RG
    GREENWALD, AG
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (08): : 1031 - 1032
  • [28] DAMAGE ANNEALING BEHAVIOR IN DIATOMIC PHOSPHORUS ION-IMPLANTED SILICON
    YANG, GQ
    KHANH, NQ
    FRIED, M
    KOTAI, E
    SCHILLER, V
    LU, LC
    GYULAI, J
    ZOU, SH
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1990, 115 (1-3): : 183 - 192
  • [29] LASER ANNEALING OF NITROGEN AND OXYGEN ION-IMPLANTED SILICON LAYERS
    DELLAMEA, G
    MAZZOLDI, P
    FOTI, G
    RIMINI, E
    MATERIALS CHEMISTRY, 1979, 4 (03): : 565 - 569
  • [30] PULSED LASER ANNEALING OF ION-IMPLANTED POLYCRYSTALLINE SILICON FILMS
    WU, CP
    MAGEE, CW
    APPLIED PHYSICS LETTERS, 1979, 34 (11) : 737 - 739
12345