EFFECTS OF SUBSTRATE-TEMPERATURE ON GAAS TUNNELING DIODES GROWN BY MOLECULAR-BEAM EPITAXY

被引：2
|
作者：
KATSUMOTO, S
AMANO, C
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 04期
关键词：
D O I：
10.1063/1.339991
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1238 / 1240
页数：3
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