共 50 条
- [21] APPLICATIONS OF GAAS GROWN AT A LOW-TEMPERATURE BY MOLECULAR-BEAM EPITAXYMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 22 (01): : 72 - 77MISHRA, UK
- [22] Characterization of low-temperature-grown molecular-beam epitaxy GaAsPROCEEDINGS OF THE TWENTY-FOURTH STATE-OF-THE-ART-PROGRAM ON COMPOUND SEMICONDUCTORS, 1996, 96 (02): : 97 - 102Look, DC
- [23] INP/INALAS RESONANT TUNNELING DIODES GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXYJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (12B): : L1733 - L1735KAWAMURA, YIWAMURA, H
- [24] RELIABLE SUBSTRATE-TEMPERATURE MEASUREMENTS FOR HIGH-TEMPERATURE ALGAAS MOLECULAR-BEAM EPITAXY GROWTHJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02): : 290 - 292STRITE, SKAMP, MMEIER, HP
- [25] LOW SUBSTRATE-TEMPERATURE MOLECULAR-BEAM EPITAXIAL-GROWTH AND THE CRITICAL LAYER THICKNESS OF INGAAS GROWN ON GAASJOURNAL OF APPLIED PHYSICS, 1991, 70 (05) : 2634 - 2640ELMAN, BKOTELES, ESMELMAN, POSTREICHER, KSUNG, C
- [26] GAAS IMPATT DIODES PREPARED BY MOLECULAR-BEAM EPITAXYAPPLIED PHYSICS LETTERS, 1974, 25 (04) : 224 - 226CHO, AYDUNN, CNKUVAS, RLSCHROEDER, WE
- [27] GAAS IMPATT DIODES PREPARED BY MOLECULAR-BEAM EPITAXYIEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (11) : 736 - 736CHO, AYDUNN, CNKUVAS, RLSCHROEDE.WE
- [28] ALGASB/GASB DIODES GROWN BY MOLECULAR-BEAM EPITAXYAPPLIED PHYSICS LETTERS, 1991, 59 (09) : 1117 - 1119LONGENBACH, KFWANG, WI
- [29] TUNNELING MICROSCOPY AND SPECTROSCOPY OF MOLECULAR-BEAM EPITAXY GROWN GAAS-ALGAAS INTERFACESAPPLIED PHYSICS LETTERS, 1990, 57 (01) : 31 - 33ALBREKTSEN, OARENT, DJMEIER, HPSALEMINK, HWM
- [30] LIGHT SENSITIVITY OF AL0.25GA0.75AS/GAAS MODULATION-DOPED STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY - EFFECT OF SUBSTRATE-TEMPERATUREELECTRONICS LETTERS, 1983, 19 (06) : 200 - 202FISCHER, RARNOLD, DTHORNE, REDRUMMOND, TJMORKOC, H