MOLECULAR-BEAM SYSTEM CONTROLLED BY QUADRUPOLE MASS-SPECTROMETER

被引:12
作者
ETIENNE, P [1 ]
MASSIES, J [1 ]
LINH, NT [1 ]
机构
[1] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
来源
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS | 1977年 / 10卷 / 11期
关键词
D O I
10.1088/0022-3735/10/11/018
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:1153 / 1155
页数:3
相关论文
共 15 条
[1]   GAAS, GAP, AND GAASXP1-X EPITAXIAL FILMS GROWN BY MOLECULAR BEAM DEPOSITION [J].
ARTHUR, JR ;
LEPORE, JJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :545-&
[2]   INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES [J].
ARTHUR, JR .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) :4032-&
[3]   GROWTH OF A GAAS-GAAIAS SUPERLATTICE [J].
CHANG, LL ;
ESAKI, L ;
HOWARD, WE ;
LUDEKE, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (01) :11-16
[4]   PROPERTIES OF SCHOTTKY BARRIERS AND P-N-JUNCTIONS PREPARED WITH GAAS AND ALX GA1-XAS MOLECULAR-BEAM EPITAXIAL LAYERS [J].
CHO, AY ;
CASEY, HC .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) :1258-1263
[5]   SURFACE STRUCTURES AND PHOTOLUMINESCENCE OF MOLECULAR BEAM EPITAXIAL FILMS OF GAAS [J].
CHO, AY ;
HAYASHI, I .
SOLID-STATE ELECTRONICS, 1971, 14 (02) :125-&
[6]   P-N JUNCTION FORMATION DURING MOLECULAR-BEAM EPITAXY OF GE-DOPED GAAS [J].
CHO, AY ;
HAYASHI, I .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4422-&
[7]   EPITAXY BY PERIODIC ANNEALING [J].
CHO, AY .
SURFACE SCIENCE, 1969, 17 (02) :494-&
[8]   LOW-NOISE AND HIGH-POWER GAAS MICROWAVE FIELD-EFFECT TRANSISTORS PREPARED BY MOLECULAR-BEAM EPITAXY [J].
CHO, AY ;
DILORENZO, JV ;
HEWITT, BS ;
NIEHAUS, WC ;
SCHLOSSER, WO ;
RADICE, C .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) :346-349
[9]  
CHO AY, 1976, PROGR SOLID STATE CH, V10
[10]  
Ilegems M., 1975, J APPL PHYS, V46, P3059