P-N JUNCTION FORMATION DURING MOLECULAR-BEAM EPITAXY OF GE-DOPED GAAS

被引：83
作者：
CHO, AY
HAYASHI, I
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 11期
关键词：
D O I：
10.1063/1.1659789
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：4422 / &
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