EPITAXY OF SILICON DOPED GALLIUM ARSENIDE BY MOLECULAR BEAM METHOD

被引：41
作者：
CHO, AY
HAYASHI, I
机构：
来源：
METALLURGICAL TRANSACTIONS | 1971年 / 2卷 / 03期
关键词：
D O I：
10.1007/BF02662735
中图分类号：
TF [冶金工业];
学科分类号：
0806 ;
摘要：
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页码：777 / &
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