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- [2] QUANTUM EFFICIENCY AND RADIATIVE LIFETIME IN P-TYPE GALLIUM ARSENIDEJOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2815 - &VILMS, JSPICER, WE
- [3] RADIATIVE RECOMBINATION RATE OF DONOR-ACCEPTOR PAIRSCANADIAN JOURNAL OF PHYSICS, 1969, 47 (18) : 1971 - &NOVOTNY, V
- [4] RADIATIVE RECOMBINATION OF DONOR-ACCEPTOR PAIRS IN ZNTESOLID STATE COMMUNICATIONS, 1981, 38 (12) : 1289 - 1292NAKASHIMA, SNAKAMURA, A
- [5] LIFETIMES FOR RADIATIVE CHARGE RECOMBINATION IN DONOR-ACCEPTOR MOLECULESJOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1994, 116 (16) : 7349 - 7355BIXON, MJORTNER, JVERHOEVEN, JW
- [6] RADIATIVE LIFETIMES IN N-TYPE GALLIUM ARSENIDEAPPLIED PHYSICS LETTERS, 1969, 14 (06) : 183 - &DINGLE, RRODGERS, KF
- [7] FORMATION OF DONOR-ACCEPTOR PAIRS IN GALLIUM ARSENIDE BY LOW-TEMPERATURE GAMMA IRRADIATION.1978, 12 (10): : 1176 - 1179Vitovskii, N.A.Emel'yanenko, O.V.Lagunova, T.S.Mashovets, T.V.Mustafakulov, D.
- [8] THEORY OF TRANSITION ENERGIES AND RADIATIVE LIFETIMES OF ISOLATED NEAR-NEIGHBOR DONOR-ACCEPTOR PAIRSJOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (20): : 3457 - 3467JEFFERSON, JHHAGSTON, WESUTHERLAND, HH
- [9] SILICON DONOR-ACCEPTOR PAIR DEFECTS IN GALLIUM-ARSENIDEJOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (20): : L785 - L788BROZEL, MRNEWMAN, RCOZBAY, B
- [10] RADIATIVE RECOMBINATION OF DONOR-ACCEPTOR PAIRS IN POLAR SEMICONDUCTORSPHYSICAL REVIEW B, 1980, 21 (02): : 648 - 658KARTHEUSER, EEVRARD, RWILLIAMS, F