HALL MEASUREMENTS ON SILICON FIELD EFFECT TRANSISTOR STRUCTURES

被引：36

作者：

FOWLER, AB

HOCHBERG, F

FANG, F

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1964年 / 8卷 / 04期

关键词：

D O I：

10.1147/rd.84.0427

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：427 / &

共 17 条

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