CARRIER SURFACE SCATTERING IN SILICON INVERSION LAYERS

被引：28

作者：

FANG, F

TRIEBWASSER, S

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1964年 / 8卷 / 04期

关键词：

D O I：

10.1147/rd.84.0410

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：410 / &

共 18 条

[1]

BLATT FJ, 1957, SOLID STATE PHYSICS, V4

[2] PROPERTIES OF SILICON AND GERMANIUM .2. [J].

CONWELL, EM .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :1281-1300

[3] SURFACE MAGNETOCONDUCTIVITY EXPERIMENTS ON SILICON [J].

COOVERT, RE .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 21 (1-2) :87-98

[4] EFFECT OF SURFACE SCATTERING ON ELECTRON MOBILITY IN INVERSION LAYER ON P-TYPE SILICON ( TRANSVERSE ELECTRIC FIELD EFFECT ON CARRIER MOBILITY E/T ) [J].

FANG, F ;

TRIEBWASSER, S .

APPLIED PHYSICS LETTERS, 1964, 4 (08) :145-&

[5] HALL MEASUREMENTS ON SILICON FIELD EFFECT TRANSISTOR STRUCTURES [J].

FOWLER, AB ;

HOCHBERG, F ;

FANG, F .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) :427-&

[6] The conductivity of thin metallic films according to the electron theory of metals [J].

Fuchs, K .

PROCEEDINGS OF THE CAMBRIDGE PHILOSOPHICAL SOCIETY, 1938, 34 :100-108

[7] SURFACE TRANSPORT IN SEMICONDUCTORS [J].

GREENE, RF ;

FRANKL, DR ;

ZEMEL, J .

PHYSICAL REVIEW, 1960, 118 (04) :967-975

[8] ELECTRICAL PROPERTIES OF THIN-FILM SEMICONDUCTORS [J].

HAM, FS ;

MATTIS, DC .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (02) :143-151

[9]

KINGSTON RH, 1956, SEMICONDUCTOR SUR ED, P55

[10] SEMICONDUCTOR SURFACE VARACTOR [J].

LINDNER, R .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (03) :803-+

← 1 2 →