ELECTRICAL PROFILING AND OPTICAL ACTIVATION STUDIES OF BE-IMPLANTED GAAS

被引:63
|
作者
MCLEVIGE, WV
HELIX, MJ
VAIDYANATHAN, KV
STREETMAN, BG
机构
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[2] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
关键词
D O I
10.1063/1.324218
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3342 / 3346
页数:5
相关论文
共 50 条
  • [41] SHORT-TIME THRESHOLD FOR ELECTRICAL ACTIVATION OF IMPLANTED AND ANNEALED GAAS
    PANKNIN, D
    WIESER, E
    FATTACHOV, YV
    KHAIBULLIN, IB
    EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 : 190 - 192
  • [42] Electrical activation process of C implanted semi-insulating GaAs
    Kuriyama, K
    Kato, T
    Tomizawa, K
    Takahashi, Y
    Aoki, Y
    Takeshita, H
    Yamamoto, S
    Naramoto, H
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 878 - 881
  • [43] ANOMALOUS ELECTRICAL ACTIVATION IN SI-IMPLANTED GAAS/ALGAAS SUPERLATTICES
    LEE, ST
    CHEN, S
    BRAUNSTEIN, G
    KO, KY
    TAN, TY
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 (59-60): : 999 - 1002
  • [44] SPECTROSCOPIC ELLIPSOMETRY AND RAMAN-SCATTERING STUDY OF THE ANNEALING BEHAVIOR OF BE-IMPLANTED GAAS
    CHAMBON, P
    ERMAN, M
    THEETEN, JB
    PREVOT, B
    SCHWAB, C
    APPLIED PHYSICS LETTERS, 1984, 45 (04) : 390 - 392
  • [45] Optical and electrical properties of Si+ ion-implanted GaAs
    Shima, T
    Makita, Y
    Iqbal, MZ
    Kotani, M
    Iida, T
    Morton, R
    Lau, SS
    Koura, N
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1998, 253 (1-2): : 306 - 309
  • [46] Optical and electrical properties of Ca+ and Sr+ implanted GaAs
    Shen, HL
    Makita, Y
    Tsukamoto, K
    Kimura, S
    Shibata, H
    Kobayashi, N
    Obara, A
    REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY, SUPPLEMENT NO 14, MARCH 1996, 1996, : 51 - 56
  • [47] The electrical and optical studies of NTD GaAs crystals
    Strzelecka, S
    Hruban, A
    Gladysz, M
    JurkiewiczWegner, E
    Orlowski, W
    Surma, B
    Piersa, M
    Gladki, A
    Mirowska, A
    SOLID STATE CRYSTALS: GROWTH AND CHARACTERIZATION, 1997, 3178 : 242 - 245
  • [48] GLOW-DISCHARGE OPTICAL SPECTROSCOPY PROFILING OF ION-IMPLANTED GAAS
    WILLIAMSON, KR
    EHRET, JE
    YUN, SS
    THEIS, WM
    PARK, YS
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (03): : 314 - 314
  • [49] Electrical and optical studies of Si-implanted GaN
    Fellows, JA
    Yeo, YK
    Hengehold, RL
    Krasnobaev, L
    GAN AND RELATED ALLOYS-2001, 2002, 693 : 407 - 412
  • [50] REDUCED LATERAL DIFFUSION AND REVERSE LEAKAGE IN BE-IMPLANTED GAAS1-XPX DIODES
    CHATTERJEE, PK
    STREETMAN, BG
    SOLID-STATE ELECTRONICS, 1977, 20 (04) : 305 - &