ELECTRICAL PROFILING AND OPTICAL ACTIVATION STUDIES OF BE-IMPLANTED GAAS

被引：63

作者：

MCLEVIGE, WV

HELIX, MJ

VAIDYANATHAN, KV

STREETMAN, BG

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 08期

关键词：

D O I：

10.1063/1.324218

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3342 / 3346

页数：5

共 50 条

[21] RAMAN-SCATTERING EVALUATION OF LATTICE DAMAGE AND ELECTRICAL-ACTIVITY IN BE-IMPLANTED GAAS
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[22] ELECTRICAL CHARACTERISTICS OF BE-IMPLANTED GAAS DIODES ANNEALED WITH AN ULTRAHIGH POWER ARGON ARC LAMP
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[24] EFFECT OF F COIMPLANT DURING ANNEALING OF BE-IMPLANTED GAAS
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[28] STUDY OF ELECTRICAL ACTIVATION IN ION-IMPLANTED GAAS
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[29] EFFECTS OF STRESS ON THE ELECTRICAL ACTIVATION OF IMPLANTED SI IN GAAS
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