ELECTRICAL PROFILING AND OPTICAL ACTIVATION STUDIES OF BE-IMPLANTED GAAS

被引:63
|
作者
MCLEVIGE, WV
HELIX, MJ
VAIDYANATHAN, KV
STREETMAN, BG
机构
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[2] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
关键词
D O I
10.1063/1.324218
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3342 / 3346
页数:5
相关论文
共 50 条
  • [1] DIFFUSION STUDIES OF BE-IMPLANTED GAAS BY SIMS AND ELECTRICAL PROFILING
    MCLEVIGE, WV
    VAIDYANATHAN, KV
    STREETMAN, BG
    COMAS, J
    PLEW, L
    SOLID STATE COMMUNICATIONS, 1978, 25 (12) : 1003 - 1008
  • [2] OPTICAL STUDIES OF BE-IMPLANTED GAAS
    KWUN, SI
    SPITZER, WG
    ANDERSON, CL
    DUNLAP, HL
    VAIDYANATHAN, KV
    JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 6873 - 6880
  • [3] OPTICAL STUDIES ON BE-IMPLANTED GAAS
    KWUN, SI
    SPITZER, WG
    ANDERSON, CL
    DUNLAP, HL
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (01): : 19 - 19
  • [4] ACTIVATION OF BE-IMPLANTED GAAS BY USING RTA WITH PROXIMITY CONTACT
    LU, YC
    DEARAUJO, CAP
    KALKUR, TS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (06) : 1904 - 1907
  • [5] ELECTRICAL MEASUREMENTS AND OPTICAL ACTIVATION STUDIES IN MG-IMPLANTED GAAS
    YEO, YK
    PARK, YS
    YU, PW
    JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3274 - 3281
  • [7] ELECTRICAL CHARACTERISTICS OF BE-IMPLANTED GAAS ACTIVATED BY RAPID THERMAL ANNEALING
    MAEZAWA, K
    OE, K
    IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) : 13 - 15
  • [8] PHOTOLUMINESCENCE OF BE-IMPLANTED BULK GAAS
    COMAS, J
    BISHOP, SG
    MCCOMBE, BD
    SUNDARAM, S
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (04): : 549 - 549
  • [9] ELECTRICAL-PROPERTIES OF BE-IMPLANTED GAAS1-XPX
    CHATTERJEE, PK
    MCLEVIGE, WV
    STREETMAN, BG
    SOLID-STATE ELECTRONICS, 1976, 19 (11) : 961 - 964
  • [10] PHOTOLUMINESCENCE FROM BE-IMPLANTED GAAS
    CHATTERJEE, PK
    VAIDYANATHAN, KV
    MCLEVIGE, WV
    STREETMAN, BG
    APPLIED PHYSICS LETTERS, 1975, 27 (10) : 567 - 569