GROWTH AND CHARACTERIZATION OF STRAIN COMPENSATED SI1-X-YGEXCY EPITAXIAL LAYERS

被引：73
|
作者：
REGOLINI, JL
GISBERT, F
DOLINO, G
BOUCAUD, P
机构：
[1] CEN GRENOBLE,LETI,DOPT,SLIR,F-38041 GRENOBLE,FRANCE
[2] SPECTROMETRIE PHYS LAB,CNRS,URA 0008,F-38402 ST MARTIN DHERES,FRANCE
[3] UNIV PARIS 11,INST ELECTR FONDAMENTALE,F-91405 ORSAY,FRANCE
来源：
MATERIALS LETTERS | 1993年 / 18卷 / 1-2期
关键词：
D O I：
10.1016/0167-577X(93)90056-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have fabricated partially strain compensated, epitaxial layers of the ternary alloy SiGeC on (001)Si substrates. Using a rapid thermal chemical vapor deposition reactor working at reduced pressure and at 650 degrees C, we obtained strained SiGe layers which can be compensated for zero net strain when substitutional C is added during the layer growth. These solid solution layers, characterized essentially by optical microscopy and X-ray diffraction, are partially strain compensated because the misfit dislocations observed on fully strained layers are no longer present with the addition of a small percentage of C.
引用
收藏
页码：57 / 60
页数：4
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