Electrical propel-ties of ZrO2 films on Si1-x-yGexCy epitaxial layers

被引：0
|
作者：
Chatterjee, S [1 ]
Dalapati, GK [1 ]
Samanta, SK [1 ]
Maiti, CK [1 ]
机构：
[1] Indian Inst Technol, Dept Elect & ECE, Kharagpur 721302, W Bengal, India
来源：
APPLIED SURFACE SCIENCE | 2004年 / 224卷 / 1-4期
关键词：
dielectric constant; epitaxial layers; electrical properties;
D O I：
10.1016/j.apsusc.2003.08.056
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Deposition and electrical properties of high dielectric constant (high-k) ultrathin ZrO2 films on partially strain-compensated Si1-xGexCy/n-Si substrates are reported. Metal insulator semiconductor (MIS) structures were used for high frequency capacitance-voltage (C-V), current-voltage (I-V), and Fowler-Nordheim (F-N) constant current stressing studies. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：288 / 291
页数：4
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