Electrical propel-ties of ZrO2 films on Si1-x-yGexCy epitaxial layers

被引：0
|
作者：
Chatterjee, S [1 ]
Dalapati, GK [1 ]
Samanta, SK [1 ]
Maiti, CK [1 ]
机构：
[1] Indian Inst Technol, Dept Elect & ECE, Kharagpur 721302, W Bengal, India
来源：
APPLIED SURFACE SCIENCE | 2004年 / 224卷 / 1-4期
关键词：
dielectric constant; epitaxial layers; electrical properties;
D O I：
10.1016/j.apsusc.2003.08.056
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Deposition and electrical properties of high dielectric constant (high-k) ultrathin ZrO2 films on partially strain-compensated Si1-xGexCy/n-Si substrates are reported. Metal insulator semiconductor (MIS) structures were used for high frequency capacitance-voltage (C-V), current-voltage (I-V), and Fowler-Nordheim (F-N) constant current stressing studies. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：288 / 291
页数：4
相关论文
共 50 条
  • [41] Carbon incorporation in epitaxial Si1-x-yGexCy layers grown on (100)Si by rapid thermal chemical vapor deposition using methylsilane
    Mi, J
    Warren, P
    Letourneau, P
    Judelewicz, M
    Dutoit, M
    PROCEEDINGS OF THE THIRTEENTH INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITION, 1996, 96 (05): : 330 - 335
  • [42] Growth of Si1-x-yGexCy alloy layers on Si by chemical vapor deposition using ethylene
    Zheng, YD
    Jiang, N
    Han, P
    Gu, SL
    Zhu, SM
    Jiang, RL
    Shi, Y
    Lu, WF
    Shen, B
    Zhang, R
    GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2004, 95-96 : 243 - 248
  • [43] High quality Si1-x-yGexCy epitaxial layers grown on (100) Si by rapid thermal chemical vapor deposition using methylsilane
    Appl Phys Lett, 2 (259):
  • [44] Critical points of Si1-yCy and Si1-x-yGexCy layers strained pseudomorphically on Si(001)
    Kissinger, W
    Osten, HJ
    Weidner, M
    Eichler, M
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (06) : 3016 - 3020
  • [45] Microwave plasma oxidation of strain-compensated Si1-x-yGexCy films
    Ray, SK
    Bera, LK
    John, S
    Banerjee, SK
    Maiti, CK
    PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 664 - 667
  • [46] Ellipsometric investigation of strain reduction in Si1-x-yGexCy layers compared to Si1-xGex layers on silicon
    Mukerjee, S
    Venkataraman, V
    SOLID-STATE ELECTRONICS, 2001, 45 (11) : 1875 - 1877
  • [47] Carbon and germanium distributions in Si1-x-yGexCy layers epitaxially grown on Si(001) by RTCVD
    Guedj, C
    Portier, X
    Hairie, A
    Bouchier, D
    Calvarin, G
    Piriou, B
    THIN SOLID FILMS, 1997, 294 (1-2) : 129 - 132
  • [48] Carbon and germanium distributions in Si1-x-yGexCy layers epitaxially grown on Si(001) by RTCVD
    Alcatel Alsthom Recherche, Marcoussis, France
    Thin Solid Films, 1-2 (129-132):
  • [49] Band gap and heterojunction discontinuities of pseudomorphic Si1-x-yGexCy alloy layers on Si(001)
    Wu, LQ
    Huang, MC
    Zhu, ZZ
    Li, KH
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (04) : 2165 - 2169
  • [50] MBE growth and optical properties of Si1-yCy and Si1-x-yGexCy alloy layers
    Eberl, K
    Brunner, K
    OPTICAL SPECTROSCOPY OF LOW DIMENSIONAL SEMICONDUCTORS, 1997, 344 : 1 - 20
12345