The effect of carbon and germanium on phase transformation of nickel on Si1-x-yGexCy epitaxial layers

被引：0
|
作者：
Hållstedt, J. [1 ]
Blomqvist, M. [1 ]
Persson, P.O.A. [2 ]
Hultman, L. [2 ]
Radamson, H.H. [1 ]
机构：
[1] Department of Microelectronics, Royal Institute of Technology (KTH), Electrum 229, S-16440 Kista, Sweden
[2] Thin Film Physics Division, Department of Physics, Linköpings Universitet, S-581 83 Linköping, Sweden
来源：
Journal of Applied Physics | 2004年 / 95卷 / 05期
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(Edited Abstract)
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页码：2397 / 2402
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