SEMICONDUCTOR MICROCRYSTALS DOPED IN SILICA GLASS THIN-FILMS PREPARED BY RF-SPUTTERING

被引：0

作者：

NASU, H

机构：

来源：

BRITISH CERAMIC TRANSACTIONS AND JOURNAL | 1990年 / 89卷 / 06期

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D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Semiconductor microcrystals, such as CdSe, CdTe, GaAs and Ge can be successfully doped in silica glass thin films by an rf-sputtering technique. The size of the microcrystals was strongly dependent on sputtering conditions. From optical absorption spectra, the quantum size effect could be seen from the crystals doped in the films, and the shift of the absorption edge basically satisfied the theoretical relationship with respect to the mean microcrystal size.

引用

页码：225 / 226

页数：2

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