THE EFFECTS OF SPATIALLY DISTRIBUTED INTERFACE STATES ON COMPOUND SEMICONDUCTOR MIS C-V CHARACTERISTICS

被引：0
|
作者：
HE, L [1 ]
HASEGAWA, H [1 ]
OHNO, H [1 ]
SAWADA, T [1 ]
机构：
[1] HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO,HOKKAIDO 060,JAPAN
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1987年 / 16卷 / 04期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：A20 / A21
页数：2
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