Determination of the Contact Potential Difference PHI MS Metal-Semiconductor by the Method of Analysis of the C-V Characteristics of a MIS Capacitor.

被引:0
|
作者
Jakubowski, Andrzej
机构
来源
Elektronika Warszawa | 1980年 / 21卷 / 10期
关键词
CAPACITORS; -; Analysis;
D O I
暂无
中图分类号
TN [电子技术、通信技术];
学科分类号
0809 ;
摘要
The method of determining metal-semiconductor work function difference PHI //M//S based on the analysis of high-frequency MIS capacitor C-V characteristics has been described. The procedure to follow as well as sources of errors made when applying the method have been discussed.
引用
收藏
页码:15 / 18
相关论文
共 10 条
  • [1] Effect of Series Resistance on C-V Characteristics of an MIS Capacitor.
    Jakubowski, Andrzej
    Jagodzinski, Pawel
    Archiwum Elektrotechniki (Warsaw), 1975, 24 (01): : 209 - 210
  • [2] NEW METHOD FOR DETERMINATION OF HEIGHT OF A POTENTIAL BARRIER IN A RECTIFYING METAL-SEMICONDUCTOR CONTACT
    FIONIK, VN
    SHERMAREVICH, VG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (05): : 638 - 639
  • [4] NEW METHOD FOR DETERMINATION OF HEIGHT OF A POTENTIAL BARRIER IN A RECTIFYING METAL-SEMICONDUCTOR CONTACT - REPLY
    FIONIK, VN
    SHERMAREVICH, VG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (03): : 367 - 368
  • [5] Temperature and voltage dependence C-V and G/ω-V characteristics in Au/n-type GaAs metal-semiconductor structures and the source of negative capacitance
    Karatas, Sukru
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2021, 32 (01) : 707 - 716
  • [6] Dynamic C-V and G-V characteristics of metal-insulator-semiconductor capacitor with Au nanocrystals and high-K tunneling layer
    Chiang, K. H.
    Wu, H. C.
    Chen, P. S.
    Kuan, C. H.
    Tsai, C. S.
    2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2, 2007, : 520 - +
  • [7] Improved extrapolation method of ultrathin oxide thickness using C-V characteristics of metal-oxide-semiconductor device
    Yang, H
    Chang, HS
    Hwang, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (5B): : L549 - L551
  • [8] Improved extrapolation method of ultrathin oxide thickness using C-V characteristics of metal-oxide-semiconductor device
    Yang, H. (hwanghs@kjist.ac.kr), 1600, Japan Society of Applied Physics (41):
  • [9] Improvement in C-V characteristics of Ge metal-oxide semiconductor capacitor by H2O2 incorporated HCl pretreatment
    Kamata, Yoshiki
    Ino, Tsunehiro
    Koyama, Masato
    Nishiyama, Akira
    APPLIED PHYSICS LETTERS, 2008, 92 (06)
  • [10] C-V characteristics of epitaxial germanium metal-oxide-semiconductor capacitor on GaAs substrate with ALD Al2O3 dielectric
    Tang, Shih Hsuan
    Kuo, Chien I.
    Hai Dang Trinh
    Hudait, Mantu
    Chang, Edward Yi
    Hsu, Ching Yi
    Su, Yung Hsuan
    Luo, Guang-Li
    Hong Quan Nguyen
    MICROELECTRONIC ENGINEERING, 2012, 97 : 16 - 19