共 10 条
- [1] Effect of Series Resistance on C-V Characteristics of an MIS Capacitor. Archiwum Elektrotechniki (Warsaw), 1975, 24 (01): : 209 - 210
- [2] NEW METHOD FOR DETERMINATION OF HEIGHT OF A POTENTIAL BARRIER IN A RECTIFYING METAL-SEMICONDUCTOR CONTACT SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (05): : 638 - 639
- [4] NEW METHOD FOR DETERMINATION OF HEIGHT OF A POTENTIAL BARRIER IN A RECTIFYING METAL-SEMICONDUCTOR CONTACT - REPLY SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (03): : 367 - 368
- [6] Dynamic C-V and G-V characteristics of metal-insulator-semiconductor capacitor with Au nanocrystals and high-K tunneling layer 2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2, 2007, : 520 - +
- [7] Improved extrapolation method of ultrathin oxide thickness using C-V characteristics of metal-oxide-semiconductor device JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (5B): : L549 - L551
- [8] Improved extrapolation method of ultrathin oxide thickness using C-V characteristics of metal-oxide-semiconductor device Yang, H. (hwanghs@kjist.ac.kr), 1600, Japan Society of Applied Physics (41):