Improved extrapolation method of ultrathin oxide thickness using C-V characteristics of metal-oxide-semiconductor device

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[1] Yang, Hyundoek

[2] Chang, Hyo Sik

[3] Hwang, Hyunsang

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Yang, H. (hwanghs@kjist.ac.kr) | 1600年 / Japan Society of Applied Physics卷 / 41期

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[1] Improved extrapolation method of ultrathin oxide thickness using C-V characteristics of metal-oxide-semiconductor device
Yang, H
Chang, HS
Hwang, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (5B): : L549 - L551
[2] C-V HYSTERESIS IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES RESULTING FROM PT DOPING OF THE GATE OXIDE
GOLJA, B
NASSIBIAN, AG
JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) : 3014 - 3017
[3] PULSE C-V METHOD FOR INVESTIGATING DEEP LEVELS IN SURFACE-LAYER OF A SEMICONDUCTOR IN A METAL-OXIDE-SEMICONDUCTOR STRUCTURE
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SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (12): : 1337 - 1339
[4] INTERFACE CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS WITH ULTRATHIN OXIDES
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[5] C-V CHARACTERISTICS OF SIC METAL-OXIDE-SEMICONDUCTOR DIODE WITH A THERMALLY GROWN SIO2 LAYER
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[7] Explanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures
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[8] Explanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures
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[9] Understanding of frequency dispersion in C-V curves of metal-oxide-semiconductor capacitor with wide-bandgap semiconductor
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[10] Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement
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