WATER-VAPOR CONTROLLING SELECTIVE REACTIVE ION ETCHING OF SIO2/SI IN NF3 PLASMA

被引：4

作者：

KONUMA, M

BAUSER, E

机构：

[1] Max-Planck-Institut für Festkörperforschung, 7000 Stuttgart 80

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 03期

关键词：

D O I：

10.1063/1.354830

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Water vapor added to NF3 plasma during reactive ion etching controls the ratio of the etch rates of SiO2 and Si. Selectivity rises from a value of 0.14 at water-free 100% NF3 to 1.99 for an initial gas composition of 35% H2O-65% NF3. The results of mass and energy analysis of the plasma yield a basis for discussing the mechanisms which effect the selectivity. The NF3/H2O plasma removes native oxides from Si surfaces.

引用

页码：1575 / 1578

页数：4

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