Quantum chemical investigation for chemical dry etching of SiO2 by flowing NF3 into H2 downflow plasma

被引：0
|
作者：
Hayashi, Toshio [1 ]
Ishikawa, Kenji [1 ]
Sekine, Makoto [1 ]
Hori, Masaru [1 ]
Kono, Akihiro [1 ]
Suu, Koukou [2 ]
机构：
[1] Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan
[2] Institute for Semiconductor and Electronics Technologies, ULVAC Inc., Susono, Shizuoka 410-1231, Japan
来源：
Japanese Journal of Applied Physics | 2012年 / 51卷 / 01期
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摘要：
Silicon oxides
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