EVIDENCE FOR INCLUSIONS IN RHODIUM DOPED MOLECULAR-BEAM EPITAXY GROWN GAAS-LAYERS

被引：4
|
作者：
GUENAIS, B [1 ]
GUIVARCH, A [1 ]
CHAPLAIN, R [1 ]
POUDOULEC, A [1 ]
GUILLOT, G [1 ]
机构：
[1] INST NATL SCI APPL LYON,PHYS MAT LAB,F-69621 VILLEURBANNE,FRANCE
来源：
JOURNAL OF CRYSTAL GROWTH | 1989年 / 96卷 / 01期
关键词：
D O I：
10.1016/0022-0248(89)90282-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：119 / 126
页数：8
相关论文
共 50 条
  • [1] SEMIINSULATING GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    KORDOS, P
    FORSTER, A
    BETKO, J
    MORVIC, M
    NOVAK, J
    APPLIED PHYSICS LETTERS, 1995, 67 (07) : 983 - 985
  • [2] SOME CHARACTERISTICS OF HEAVILY BE-DOPED GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    ZHANG, DH
    RADHAKRISHNAN, K
    YOON, SF
    LI, HM
    LEK, AW
    LAU, EH
    THIN SOLID FILMS, 1993, 235 (1-2) : 1 - 5
  • [3] BE-DOPED GAAS-LAYERS GROWN AT A HIGH AS/GA RATIO BY MOLECULAR-BEAM EPITAXY
    ZHANG, DH
    RADHAKRISHNAN, K
    YOON, SF
    LI, HM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (04): : 1120 - 1123
  • [4] GAAS MOLECULAR-BEAM EPITAXY ON BE IMPLANTED GAAS-LAYERS
    TAKAMORI, A
    MIYAUCHI, E
    ARIMOTO, H
    BAMBA, Y
    HASHIMOTO, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (08): : L520 - L522
  • [5] UNINTENTIONAL DOPANTS INCORPORATED IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    COVINGTON, DW
    MEEKS, EL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03): : 847 - 850
  • [6] ORIGIN OF OVAL DEFECTS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    AKIMOTO, K
    DOHSEN, M
    ARAI, M
    WATANABE, N
    JOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) : 117 - 122
  • [7] HIGH-QUALITY SI-DOPED GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    SHIMANOE, T
    MUROTANI, T
    NAKATANI, M
    OTSUBO, M
    MITSUI, S
    SURFACE SCIENCE, 1979, 86 (JUL) : 126 - 136
  • [8] SOME EFFECTS IN HEAVY SI-DOPED GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    FATT, YS
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1993, 12 (08) : 609 - 611
  • [9] INVESTIGATION OF RIPPLE DEFECTS ON MOLECULAR-BEAM EPITAXY GROWN GAAS-LAYERS
    KADHIM, NJ
    MUKHERJEE, D
    MEHTA, M
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1993, 12 (09) : 623 - 625
  • [10] COMPARISON OF THE GAAS-LAYERS GROWN ON POROUS SI AND ON SI BY MOLECULAR-BEAM EPITAXY
    WU, BJ
    WANG, KL
    MII, YJ
    YOON, YS
    WU, AT
    GEORGE, T
    WEBER, E
    III-V HETEROSTRUCTURES FOR ELECTRONIC / PHOTONIC DEVICES, 1989, 145 : 343 - 348
12345