EVIDENCE FOR INCLUSIONS IN RHODIUM DOPED MOLECULAR-BEAM EPITAXY GROWN GAAS-LAYERS

被引：4
|
作者：
GUENAIS, B [1 ]
GUIVARCH, A [1 ]
CHAPLAIN, R [1 ]
POUDOULEC, A [1 ]
GUILLOT, G [1 ]
机构：
[1] INST NATL SCI APPL LYON,PHYS MAT LAB,F-69621 VILLEURBANNE,FRANCE
来源：
JOURNAL OF CRYSTAL GROWTH | 1989年 / 96卷 / 01期
关键词：
D O I：
10.1016/0022-0248(89)90282-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：119 / 126
页数：8
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