UNINTENTIONAL DOPANTS INCORPORATED IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：12
|
作者：
COVINGTON, DW
MEEKS, EL
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 03期
关键词：
D O I：
10.1116/1.570098
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：847 / 850
页数：4
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