INITIAL GROWTH OF GALLIUM-ARSENIDE ON SILICON BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：12

作者：

ROSNER, SJ ^{[1
]}

AMANO, J ^{[1
]}

LEE, JW ^{[1
]}

FAN, JCC ^{[1
]}

机构：

[1] KOPIN CORP,TAUNTON,MA 02780

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 12期

关键词：

D O I：

10.1063/1.100033

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1101 / 1103

页数：3

共 50 条

[31] PROBING THE MECHANISMS OF GROWTH OF GALLIUM-ARSENIDE BY METALORGANIC VAPOR-PHASE EPITAXY USING EXPERIMENTAL AND THEORETICAL-STUDIES OF DESIGNED PRECURSORS
FOSTER, DF
GLIDEWELL, C
COLEHAMILTON, DJ
JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (02) : 69 - 74
[32] VAPOR-PHASE SYNTHESIS AND EPITAXIAL GROWTH OF GALLIUM ARSENIDE
GOLDSMITH, N
OSHINSKY, W
RCA REVIEW, 1963, 24 (04): : 546 - 554
[33] VAPOR-PHASE PRESSURE OVER SOLUTIONS OF GALLIUM-PHOSPHIDE AND GALLIUM-ARSENIDE IN INDIUM
KHUKHRYANSKII, YP
PANTELEEV, VI
NIKOLAEVA, EP
KONDAUROV, VP
ZHURNAL FIZICHESKOI KHIMII, 1976, 50 (01): : 246 - 247
[34] CONTROLLED OXYGEN INCORPORATION IN INDIUM GALLIUM-ARSENIDE AND INDIUM-PHOSPHIDE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
HUANG, JW
RYAN, JM
BRAY, KL
KUECH, TF
JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (11) : 1539 - 1546
[35] GROWTH OF CDTE ON INSB BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
GHANDHI, SK
BHAT, I
APPLIED PHYSICS LETTERS, 1984, 45 (06) : 678 - 680
[36] ON THE MECHANISM OF GROWTH OF CDTE BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
BHAT, IB
TASKAR, NR
GHANDHI, SK
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (01) : 195 - 198
[37] LIQUID-PHASE EPITAXY OF GALLIUM-ARSENIDE
MARUYAMA, S
JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (03) : 424 - &
[38] EFFECT OF AS4 OVERPRESSURE ON INITIAL GROWTH OF GALLIUM-ARSENIDE ON SILICON BY MOLECULAR-BEAM EPITAXY
PALMER, JE
BURNS, G
FONSTAD, CG
THOMPSON, CV
APPLIED PHYSICS LETTERS, 1989, 55 (10) : 990 - 992
[39] PATTERNED GROWTH OF GALLIUM-ARSENIDE ON SILICON
MATYI, RJ
SHICHIJO, H
TSAI, HL
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 699 - 702
[40] Growth of gallium nitride by hydride vapor-phase epitaxy
Molnar, RJ
Gotz, W
Romano, LT
Johnson, NM
JOURNAL OF CRYSTAL GROWTH, 1997, 178 (1-2) : 147 - 156

← 1 2 3 4 5 →