INITIAL GROWTH OF GALLIUM-ARSENIDE ON SILICON BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：12

作者：

ROSNER, SJ ^{[1
]}

AMANO, J ^{[1
]}

LEE, JW ^{[1
]}

FAN, JCC ^{[1
]}

机构：

[1] KOPIN CORP,TAUNTON,MA 02780

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 12期

关键词：

D O I：

10.1063/1.100033

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1101 / 1103

页数：3

共 50 条

[21] LIQUID-PHASE EPITAXY OF GALLIUM-ARSENIDE ON SILICON SUBLAYERS
ZHURBA, AM
KOVALENKO, VF
KRASNOV, VA
LISOVOI, BV
SHUTOV, SV
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1991, 17 (07): : 25 - 27
[22] Gallium arsenide and indium arsenide surfaces produced by metalorganic vapor-phase epitaxy
Li, L
Han, BK
Law, D
Begarney, M
Hicks, RF
JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) : 28 - 33
[23] EFFECT OF ELECTRICAL-FIELD ON GROWTH OF GALLIUM-ARSENIDE LAYERS FROM VAPOR-PHASE
LAVRENTIEVA, LG
IKONNIKOVA, GM
KRASILNIKOVA, LM
CRYSTAL RESEARCH AND TECHNOLOGY, 1981, 16 (08) : 893 - 898
[24] THE EFFECT OF SILICON DOPING ON THE LATTICE-PARAMETER OF GALLIUM-ARSENIDE GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY AND GRADIENT-FREEZE TECHNIQUES
FEWSTER, PF
WILLOUGHBY, AFW
JOURNAL OF CRYSTAL GROWTH, 1980, 50 (03) : 648 - 653
[25] EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE BY CHEMICAL-DEPOSITION IN THE VAPOR-PHASE FROM A NEW ORGANOMETALLIC COMPOUND, MONOCHLORODIMETHYLGALLIUM TRIETHYTHLARSINE
ZAOUK, A
CONSTANT, G
JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 421 - 426
[26] GALLIUM-ARSENIDE EPITAXY IN SILICON SUBSTRATE WINDOWS
OSINSKII, VI
KATSAPOV, FM
DOKLADY AKADEMII NAUK BELARUSI, 1978, 22 (02): : 123 - 126
[27] Initial stages of gallium arsenide metalorganic vapor phase epitaxy
Boldyrevskii, P. B.
Filatov, D. O.
Kazantseva, I. A.
Smotrin, D. S.
Revin, M. V.
INORGANIC MATERIALS, 2016, 52 (10) : 985 - 989
[28] Initial stages of gallium arsenide metalorganic vapor phase epitaxy
P. B. Boldyrevskii
D. O. Filatov
I. A. Kazantseva
D. S. Smotrin
M. V. Revin
Inorganic Materials, 2016, 52 : 985 - 989
[29] VAPOR-PHASE EQUILIBRIA OF ARSENIC-TRIOXIDE OVER GALLIUM-ARSENIDE
TERAMOTO, I
TAKAGI, H
KANO, G
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (04) : 723 - 728
[30] HYPERABRUPT VARACTORS FABRICATED FROM VAPOR-PHASE EPITAXIAL GALLIUM-ARSENIDE
HEATON, JL
WALLINE, RE
INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1979, 17 (06) : 357 - 361

← 1 2 3 4 5 →