INITIATION OF MISFIT DISLOCATIONS IN THE REGIONS OF STRAIN CONCENTRATION IN THE SYSTEM GE-(001)GAAS

被引：0
|
作者：
ALAVERDOVA, OG
KOVAL, LP
MIKHAILOV, IF
FUKS, MY
机构：
来源：
KRISTALLOGRAFIYA | 1987年 / 32卷 / 05期
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：1211 / 1214
页数：4
相关论文
共 50 条
  • [31] ANISOTROPIC RELAXATION OF MISFIT STRAIN IN GAAS FILMS GROWN ON GAP (001)
    NOMURA, T
    ISHIKAWA, K
    MURAKAMI, K
    HAGINO, M
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 584 - 588
  • [32] STRUCTURE AND LOCATION OF MISFIT DISLOCATIONS IN INGAAS EPILAYERS GROWN ON VICINAL GAAS(001) SUBSTRATES
    CHEN, Y
    ZAKHAROV, ND
    WERNER, P
    LILIENTALWEBER, Z
    WASHBURN, J
    KLEM, JF
    TSAO, JY
    APPLIED PHYSICS LETTERS, 1993, 62 (13) : 1536 - 1538
  • [33] Nucleation of misfit and threading dislocations during epitaxial growth of GaSb on GaAs(001) substrates
    Qian, W
    Skowronski, M
    Kaspi, R
    DeGraef, M
    Dravid, VP
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (11) : 7268 - 7272
  • [34] STRAIN-RELIEF MECHANISMS AND NATURE OF MISFIT DISLOCATIONS IN GAAS/SI HETEROSTRUCTURES
    SHARAN, S
    NARAYAN, J
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1989, 113 : 57 - 63
  • [35] Misfit strain relaxation by dislocations in SrRuO3/SrTiO 3 (001) heteroepitaxy
    Oh, Sang Ho
    Park, Chan Gyung
    Journal of Applied Physics, 2004, 95 (09): : 4691 - 4704
  • [36] Critical dimensions for the formation of misfit dislocations in In0.6Ga0.4As islands on GaAs(001)
    Tillmann, K
    Förster, A
    Houben, L
    MICROSCOPY OF SEMICONDUCTING MATERIALS 2001, 2001, (169): : 127 - 132
  • [37] Misfit dislocations in strained InxGa(1-x)As heterostructure on patterned GaAs(001) substrate
    Zeng, W
    Jiang, SS
    Ferrari, C
    Gennari, S
    Salviati, G
    Jiang, JH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (06): : 3588 - 3592
  • [38] Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?
    Chen, Zi-Bin
    Lei, Wen
    Chen, Bin
    Wang, Yan-Bo
    Liao, Xiao-Zhou
    Tan, Hoe H.
    Zou, Jin
    Ringer, Simon P.
    Jagadish, Chennupati
    NANOSCALE RESEARCH LETTERS, 2012, 7
  • [39] Influences of interfacial misfit dislocations on cathodoluminescence of ZnS/GaAs(001) studied by transmission electron microscopy
    Mitsui, Tadashi
    Yamamoto, Naoki
    1600, JJAP, Tokyo, Japan (39):
  • [40] Strained germanium films in Ge/InGaAs/GaAs heterostructures: Formation of edge misfit dislocations at the Ge/InGaAs interface
    Yu. B. Bolkhovityanov
    A. P. Vasilenko
    A. K. Gutakovskii
    A. S. Deryabin
    M. A. Putyato
    L. V. Sokolov
    Physics of the Solid State, 2011, 53 : 2005 - 2011
12345