INITIATION OF MISFIT DISLOCATIONS IN THE REGIONS OF STRAIN CONCENTRATION IN THE SYSTEM GE-(001)GAAS

被引：0
|
作者：
ALAVERDOVA, OG
KOVAL, LP
MIKHAILOV, IF
FUKS, MY
机构：
来源：
KRISTALLOGRAFIYA | 1987年 / 32卷 / 05期
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：1211 / 1214
页数：4
相关论文
共 50 条
  • [21] Strain relaxation in GaAs on Si by two groups of misfit dislocations
    Tamura, M
    Saitoh, T
    Yodo, T
    EVOLUTION OF EPITAXIAL STRUCTURE AND MORPHOLOGY, 1996, 399 : 437 - 442
  • [22] Thermal Misfit Strain Relaxation in Ge/(001)Si Heterostructures
    Jayesh Bharathan
    Honghui Zhou
    Jagdish Narayan
    George Rozgonyi
    Gary E. Bulman
    Journal of Electronic Materials, 2014, 43 : 3196 - 3203
  • [23] Thermal Misfit Strain Relaxation in Ge/(001)Si Heterostructures
    Bharathan, Jayesh
    Zhou, Honghui
    Narayan, Jagdish
    Rozgonyi, George
    Bulman, Gary E.
    JOURNAL OF ELECTRONIC MATERIALS, 2014, 43 (09) : 3196 - 3203
  • [24] Strain-induced misfit dislocations in the CdTe/ZnTe(001) superlattices
    Tit, N
    PHYSICS LETTERS A, 2004, 323 (5-6) : 465 - 472
  • [25] Minimum energy path for the nucleation of misfit dislocations in Ge/Si(001) heteroepitaxy
    Trushin, O.
    Maras, E.
    Stukowski, A.
    Granato, E.
    Ying, S. C.
    Jonsson, H.
    Ala-Nissila, T.
    MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 2016, 24 (03)
  • [26] In-situ direct measurement of activation energies for the generation of misfit dislocations in the InGaAs/GaAs (001) system
    Lacey, G
    Whitehouse, CR
    Parbrook, PJ
    Cullis, AG
    Keir, AM
    Mock, P
    Johnson, AD
    Smith, GW
    Clark, GF
    Tanner, BK
    Martin, T
    Lunn, B
    Hogg, JHC
    Emeny, MT
    Murphy, B
    Bennett, S
    APPLIED SURFACE SCIENCE, 1998, 123 : 718 - 724
  • [27] In-situ direct measurement of activation energies for the generation of misfit dislocations in the InGaAs/GaAs (001) system
    Univ of Sheffield, Sheffield, United Kingdom
    Appl Surf Sci, (718-724):
  • [28] STRUCTURES AND ELECTRONIC-PROPERTIES OF MISFIT DISLOCATIONS IN ZNSE/GAAS(001) HETEROJUNCTIONS
    CHEN, Y
    LIU, X
    WEBER, E
    BOURRET, ED
    LILIENTALWEBER, Z
    HALLER, EE
    WASHBURN, J
    OLEGO, DJ
    DORMAN, DR
    GAINES, JM
    TASKER, NR
    APPLIED PHYSICS LETTERS, 1994, 65 (05) : 549 - 551
  • [29] The strain model of misfit dislocations at Ge/Si hetero-interface
    Zhao, Chunwang
    Dong, Zhaoshi
    Shen, Jiajie
    VACUUM, 2022, 196
  • [30] Relationship between dislocations and misfit strain relaxation in InGaAs/GaAs heterostructures
    Li, Jinping
    Miao, Guoqing
    Zeng, Yugang
    Zhang, Zhiwei
    Li, Dabing
    Song, Hang
    Jiang, Hong
    Chen, Yiren
    Sun, Xiaojuan
    Li, Zhiming
    CRYSTENGCOMM, 2017, 19 (01): : 88 - 92
12345