SPATIALLY RESOLVED LIFETIME MEASUREMENTS IN NEUTRON-TRANSMUTATION-DOPED POLYCRYSTALLINE SILICON

被引：9
|
作者：
DAMASKINOS, S
DIXON, AE
ROBERTS, GD
DAGG, IR
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 05期
关键词：
D O I：
10.1063/1.337258
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1681 / 1688
页数：8
相关论文
共 50 条
  • [1] NEUTRON-TRANSMUTATION-DOPED SILICON - GULDBERG,J
    HERZER, H
    NUCLEAR TECHNOLOGY, 1983, 62 (01) : 122 - 124
  • [2] ULTRASHALLOW ACCEPTORS IN NEUTRON-TRANSMUTATION-DOPED SILICON
    UDO, MK
    LABREC, CR
    RAMDAS, AK
    PHYSICAL REVIEW B, 1991, 44 (04): : 1565 - 1578
  • [3] Athermal annealing of neutron-transmutation-doped silicon
    Grun, J
    Manka, CK
    Hoffman, CA
    Meyer, JR
    Glembocki, J
    Qadri, SB
    Skelton, EF
    Donnelly, D
    Covington, B
    SHOCK COMPRESSION OF CONDENSED MATTER - 1997, 1998, 429 : 981 - 984
  • [4] EFFECT OF IRRADIATION ON THE PARAMETERS OF NEUTRON-TRANSMUTATION-DOPED SILICON
    BERMAN, LS
    VORONOV, IN
    GREKHOV, IV
    GRINSHTEIN, PM
    MOROKHOVETS, MA
    REMENYUK, AD
    INORGANIC MATERIALS, 1982, 18 (08) : 1052 - 1056
  • [5] FORMATION OF RADIATION DEFECTS IN NEUTRON-TRANSMUTATION-DOPED SILICON
    YUNUSOV, MS
    KARIMOV, M
    OKSENGENDLER, BL
    KHAKIMOV, M
    SEMICONDUCTORS, 1993, 27 (07) : 622 - 624
  • [6] ZERO-BIAS RESISTANCE OF GRAIN-BOUNDARIES IN NEUTRON-TRANSMUTATION-DOPED POLYCRYSTALLINE SILICON
    SEAGER, CH
    CASTNER, TG
    JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3879 - 3889
  • [7] ZERO-BIAS RESISTANCE OF GRAIN-BOUNDARIES IN NEUTRON-TRANSMUTATION-DOPED POLYCRYSTALLINE SILICON
    SEAGER, CH
    CASTNER, TG
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 392 - 392
  • [8] EPR STUDY OF ANNEALING BEHAVIOR OF NEUTRON-TRANSMUTATION-DOPED SILICON
    STETTER, G
    COUFAL, H
    LUSCHER, E
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 49 (01): : K17 - K20
  • [9] ANNEALING BEHAVIOR OF EXCESS CARRIERS IN NEUTRON-TRANSMUTATION-DOPED SILICON
    MAEKAWA, T
    NOGAMI, S
    INOUE, S
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (03) : 459 - 467
  • [10] CHARACTERISTICS OF ANNEALING OF RECOMBINATION CENTERS IN NEUTRON-TRANSMUTATION-DOPED SILICON
    KOLKOVSKII, II
    SHUSHA, VV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (11): : 1195 - 1197
12345