EPR STUDY OF ANNEALING BEHAVIOR OF NEUTRON-TRANSMUTATION-DOPED SILICON

被引：3
|
作者：
STETTER, G
COUFAL, H
LUSCHER, E
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1978年 / 49卷 / 01期
关键词：
D O I：
10.1002/pssa.2210490158
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：K17 / K20
页数：4
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