EPR STUDY OF ANNEALING BEHAVIOR OF NEUTRON-TRANSMUTATION-DOPED SILICON

被引：3
|
作者：
STETTER, G
COUFAL, H
LUSCHER, E
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1978年 / 49卷 / 01期
关键词：
D O I：
10.1002/pssa.2210490158
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K17 / K20
页数：4
相关论文
共 50 条
  • [21] ISOCHRONAL ANNEALING OF NEUTRON TRANSMUTATION DOPED SILICON
    GLAIRON, PJ
    MEESE, JM
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 289 - 289
  • [22] DEFECTS IN NEUTRON-TRANSMUTATION-DOPED GERMANIUM
    FUKUOKA, N
    SAITO, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (02): : 203 - 206
  • [23] NEUTRON-TRANSMUTATION-DOPED GERMANIUM BOLOMETERS
    PALAIO, NP
    RODDER, M
    HALLER, EE
    KREYSA, E
    INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 1983, 4 (06): : 933 - 943
  • [24] SPATIALLY RESOLVED LIFETIME MEASUREMENTS IN NEUTRON-TRANSMUTATION-DOPED POLYCRYSTALLINE SILICON
    DAMASKINOS, S
    DIXON, AE
    ROBERTS, GD
    DAGG, IR
    JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1681 - 1688
  • [25] NATURE AND PARAMETERS OF IMPURITY DEFECT CLUSTERS IN NEUTRON-TRANSMUTATION-DOPED SILICON
    LUGAKOV, PF
    LUKYANITSA, VV
    POKOTILO, YM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (11): : 1239 - 1241
  • [26] Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates
    S. H. Park
    T. W. Kang
    T. W. Kim
    Journal of Materials Science, 2004, 39 : 3217 - 3219
  • [27] Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates
    Park, SH
    Kang, TW
    Kim, TW
    JOURNAL OF MATERIALS SCIENCE, 2004, 39 (09) : 3217 - 3219
  • [28] INFRARED-ABSORPTION STUDY OF NEUTRON-TRANSMUTATION-DOPED GERMANIUM
    PARK, IS
    HALLER, EE
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (12) : 6775 - 6779
  • [29] OPTICAL CHARACTERIZATION OF NEUTRON-TRANSMUTATION-DOPED GAAS
    CHO, HD
    SHON, Y
    WUI, YH
    CHOI, SJ
    KIM, YH
    KIM, CB
    TONG, C
    SHIN, DH
    KANG, TW
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1995, 28 : S149 - S153
  • [30] Influence of neutron irradiation parameter and annealing temperature on neutron-transmutation-doped heteroepitaxial GaN film
    Chung, Yueh-Chun
    Chao, Der-Sheng
    Liang, Jenq-Horng
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2024, 550
12345