SPATIALLY RESOLVED LIFETIME MEASUREMENTS IN NEUTRON-TRANSMUTATION-DOPED POLYCRYSTALLINE SILICON

被引：9

|

作者：

DAMASKINOS, S

DIXON, AE

ROBERTS, GD

DAGG, IR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 05期

关键词：

D O I：

10.1063/1.337258

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1681 / 1688

页数：8

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