X-RAY TOPOGRAPHIC DEFECTS CONTRAST ON SYNTHETIC QUARTZ

被引：0
|
作者：
CHIRILA, R
CSIKI, Z
机构：
[1] Faculty of Physics, Atomic and Nuclear Department, University of Bucharest, Bucharest
[2] Gamma Factory, Budapest
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 1993年 / 28卷 / 05期
关键词：
D O I：
10.1002/crat.2170280507
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
In the present study the linear defects in several synthetic quartz have been surveyed by X-rav topography using Lang method. The grown-in dislocations produced by layers displacement around holes, precipitates or inclusions are discussed. Each growth zone is described with their own defects pattern and some correlations with the external morphology of the crystal are stated. There are also pointed out the asymmetry of the defects for every growth zone and the specific role in the growth mechanism of the s-growth zone. In the final part of the work there are outlined the general and the specific conclusions.
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页码：615 / 621
页数：7
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