INVESTIGATION OF DEFECT FORMATION IN BORON ION-IMPLANTED SILICON DURING ANNEALING

被引：4
|
作者：
KOMAROV, FF
KURYAZOV, VD
SOLOVEV, VS
SHIRYAEV, SY
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 68卷 / 02期
关键词：
D O I：
10.1002/pssa.2210680222
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：519 / 529
页数：11
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